TPCP8701 2004-05-11 1 toshiba transistor silicon npn epitaxial type TPCP8701 portable equipment applications switching applications inverter lighting applications ? small footprint due to small and thin package ? high dc current gain : h fe = 400 to 1000 (i c = 0.3 a) ? low collector-emitter saturation : v ce (sat) = 0.14 v (max) ? high-speed switching : t f = 120 ns (typ.) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 100 v v cex 80 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 7 v dc (note 1) i c 3.0 collector current pulse (note 1 ) i cp 5.0 a base current i b 300 ma single-device operation 1.77 collector power dissipation (t = 10s) single-device value at dual operation pc (note 2) 0.95 w single-device operation 0.94 collector power dissipation (dc) single-device value at dual operation pc (note 2) 0.54 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: please use devices on condition that the junction temperature is below 150c. note 2: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) note 3: on lower left on the marking indicates pin 1. weekly code: (three digits) unit: mm jedec D jeita D toshiba 2-3v1c weight: 0.017 g (typ.) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one low-order digits of calendar year) figure 1. circuit configuration (top view) figure 2. marking (note 3) type lot no. (weekly code) 8701 8 7 6 5 1 2 3 4 1 2 3 4 87 6 5 0.330.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 2.40.1 0.475 0.65 2.80.1 a 0.05 m 2.90.1 4 1 5 8 0.80.05 0.170.02 b b 0.05 m a s 0.025 s 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1.emitter1 2.base1 3.emitter2 4.base2 5.collector2 6.collector2 7.collector1 8.collector1
TPCP8701 2004-05-11 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 100 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 7 v, i c = 0 ? ? 100 na collector-emitter brakedown voltage v (br) ceo i c = 10 ma, i b = 0 50 ? ? v h fe (1) v ce = 2 v, i c = 0.3 a 400 ? 1000 dc current gain h fe (2) v ce = 2 v, i c = 1 a 200 ? ? collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 20 ma ? ? 0.14 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 20 ma ? ? 1.10 v collector output capacitance c ob v cb = 10 v, i e = 0, f = 1mhz ? 13 ? pf rise time t r ? 40 ? storage time t stg ? 500 ? switching time fall time t f see figure 3 circuit diagram v cc ? = 30 ? i b1 = ? i b2 = 33.3 ma ? 120 ? ns figure 3. switching time test circuit & timing chart ib1 20 : ib2 ib1 ib2 input output rl vcc duty cycle 1%
TPCP8701 2004-05-11 3 v be (sat) ? i c 0.001 10 10 100 10000 1000 0.01 0.1 ta = 100c ? 55c 25c 0.001 0.1 10 10 1 0.01 0.1 ta = ? 55c 100c 25c 0.001 0.001 10 1 0.1 0.01 0.1 ta = 100c ? 55c 25c 0 0 1.6 3 ? 55c ta = 100c 25c collector current i c (a) base-emitter saturation voltage v be (sat) (v) collector ? emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector ? emitter saturation voltage v ce (sat) (v) collector current i c (a) base ? emitter saturation voltage v be (v) i c ? v be 0 0 0.4 0.8 1.0 1 3 4 common emitter ta = 25c single nonrepetitive pulse 2 i b = 1 ma 20 10 5 2 0.6 0.2 2 1 1.2 0.4 0.8 common emitter v ce = 2 v single nonrepetitive pulse common emitter = 50 single nonrepetitive pulse common emitter = 50 single nonrepetitive pulse common emitter v ce = 2 v single nonrepetitive pulse 30 40 50 60 70 1 1 0.01 1 ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0.2 1.0 0 160 0.6 20 80 100 0 40 120 60 140 0.4 0.8 dc operation ta = 25c mounted on an fr4 board glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) (1) single-device operation (2) single-device value at dual operation (2) (1) (2)
TPCP8701 2004-05-11 4 1.0 0 0 0.8 1.0 0.8 transient thermal resistance r th (j-a) (c/w) r th ? t w pulse width t w (s) 1000 1 0.001 1000 0.01 0.1 1 10 100 10 100 0.6 0.2 0.4 0.2 0.6 0.4 collector power dissipation at the single-device operation is 0.94w. collector power dissipation at the single-device value at dual operation is 0.54w. collector power dissipation at the dual operation is set to 1.08w. curves should be applied in thermal limited area. single nonrepetitive pulse ta = 25c mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) (1) single-device operation (2) single-device value at dual operation permissible power dissipation for simultaneous operation permissible power dissipation for q2 p c (w) permissible power dissipation for q1 p c (w) dc operation ta = 25c mounted on an fr4 board glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) : single nonrepetitive pulse ta = 25c note that the curves for 100 ms, 10 s and dc operation will be different when the devices aren?t mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ). single-device operation these characteristic curves must be derated linearly with increase in temperature. 1 ms 10 ms 100 s i c max (pulsed) dc operation ta = 25c i c max (continuous)* 10 s * 100 ms * v ceo max collector ? emitter voltage v ce (v) safe operating area 0.01 0.1 0.1 1 10 1 10 100 collector current i c (a) 10 s (1) (2)
TPCP8701 2004-05-11 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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